MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C
نویسندگان
چکیده
منابع مشابه
3C-SiC Films on Si for MEMS Applications: Mechanical Properties
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3CSiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si sub...
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Alex A. Volinsky Department of Mechanical Engineering, University of South Florida Tampa, Florida 33620 Stephen E. Saddow Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620; and Department of Molecular Pharmacology and Physiology, University of South Florida, Tampa, Florida 33620 Francesco La Via IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Cat...
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Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising propert...
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SiC is a candidate material for microand nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVDgrown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. The film thickness was held constant at ~2.5 μm independent of the growth rate so as to allo...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2008
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-1069-d13-03